| PART |
Description |
Maker |
| 3SK147 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
| 3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
|
Hitachi Semiconductor
NEC
|
| 3SK239A |
From old datasheet system
Silicon NPN Triple Diffused
GaAs Dual Gate MES FET
|
Hitachi Semiconductor
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
